A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology

被引：25

作者：

Soyuer, M

Plouchart, JO

Ainspan, H

Burghartz, J

机构：

来源：

1997 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM: DIGEST OF TECHNICAL PAPERS | 1997年

关键词：

D O I：

10.1109/RFIC.1997.598733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5.8-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 1.65 dB and an associated gain of 15 dB is implemented in a standard SiGe bipolar technology. It dissipates 13 mW from a 1-V supply (with only 9 mW in the gain stages). The measured transducer gain is 13 dB with a noise figure of 2.1 dB at 5.8 GHz. This is believed to be the lowest noise figure reported for a 5.8-GHz LNA in any production-level technology. The transducer gain is above 10 dB from 3.8 to 8 GHz. At 5.8 GHz, the input return loss and reverse isolation are 6 and 28 dB, respectively.

引用

页码：19 / 22

页数：4