Novel large area MIS-type X-ray image sensor for digital radiography

被引：24

作者：

Kameshima, T ^{[1
]}

Kaifu, N ^{[1
]}

Takami, E ^{[1
]}

Morishita, M ^{[1
]}

Yamazaki, T ^{[1
]}

机构：

[1] Canon Inc, Device Dev Ctr, Kanagawa, Japan

来源：

PHYSICS OF MEDICAL IMAGING | 1998年 / 3336卷

关键词：

X-ray detector; X-ray imaging; digital radiography; amorphous silicon (a-Si); thin film transistor (TFT); metal insulator semiconductor (MIS)-type photoelectric converter;

D O I：

10.1117/12.317045

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

We have developed a brand new, large-area X-ray image sensor for Digital Radiography System(DRS). The sensor utilizes a thin film transistor (TFT)/metal insulator semiconductor (MIS)-type photoelectric converter array made from hydrogenated amorphous silicon (a-Si:H). The sensor has 2688 x 2688 pixels at a pitch of 160um. The active area is 17inch x 17inch. The sensor utilizes scintillator coupled to the array. The light generated by X-rays is detected by the MIS-type photoelectric converters, and the resultant signals are scanned out by switching the TFTs. The a-Si TFT/MIS-type photoelectric converter array is characterized by high signal to noise ratio (SNR) and simple fabrication process. We will describe the principle and the performance of the sensor. In addition, we will present some X-ray images of a human subject obtained with this sensor. Dynamic range of the sensor covers most of the exposure range for radiography. SNR is limited almost only by the X-ray photon noise. MTF is sufficient for digital chest radiography. X-ray images have good contrast. The experimental results and obtained images show that the brand new sensor has great advantages for replacing X-ray film. The simple fabrication process of the sensor promises high productivity and low cost of DRS.

引用

页码：453 / 462

页数：10