Progress in large-area Cu(InGa)Se2-based thin-film modules with a Zn(O,S,OH)x buffer layer

被引：38

作者：

Kushiya, K

Tachiyuki, M

Nagoya, Y

Fujimaki, A

Sang, BS

Okumura, D

Satoh, M

Yamase, O

机构：

[1] Showa Shell Sekiyu KK, Cent R&D Lab ARL, Atsugi, Kanagawa 2430206, Japan

[2] NEDO, Atsugi, Kanagawa 2430206, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

thin-film solar cell; Cu(InGa)Se-2-based thin-film modules; selenization; sulfurization;

D O I：

10.1016/S0927-0248(00)00258-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Applying basically the same innovative and robust fabrication technologies which, for the first time, led to the achievement of remarkably high efficiency of 14.2% at an aperture area of 51.7cm(2) with a Zn(O,S,OH)(x) buffer layer, the following goals have been targeted: (1) 13% efficiency on a 30cm x 30cm module and (2) establishment of the fabrication technologies to attain 140 yen/W-p in the annual production capacity of 100MW(p)/a. The main focus is currently on the technology development (1) to increase the V-oc related to the CIGS absorber and (2) to improve the J(sc) related to the DC-sputtered ZnO window layer with a multilayered structure. This contribution well explains the status and strategy of Showa Shell Sekiyu K.K. on the R&D of CIGS-based thin-film modules to achieve the above two goals by the end of FY2000. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：11 / 20

页数：10

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