Molecular imaging and local density of states characterization at the Si(111)/NaOH interface

被引：50

作者：

Allongue, P

机构：

[1] Laboratoire de Physique des Liquides et Électrochimie, Laboratoire associó à l'ESPCI, Paris, F-75005, 10 rue Vauquelin, Bat. H

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.77.1986

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present in situ scanning tunneling microscopy (STM) images with the resolution of isolated =Si-OX groups on H-Si(111) in NaOH solutions with or without isopropyl alcohol [X=H or -CH(CH3)(2)]. The comparison of STM with geometric contours shows that the electronegativity of OH ligands enhances the local density of states and generates a surface potential distribution. The dependence of both observations with the radical X and the mechanisms of grafting are discussed.

引用

页码：1986 / 1989

页数：4

共 23 条

[1] ATOMIC-STRUCTURE OF SI SURFACES ETCHED IN TRITON/NAOH SOLUTIONS [J].

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[2] ETCHING MECHANISM AND ATOMIC-STRUCTURE OF H-SI(111) SURFACES PREPARED IN NH4F [J].

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[3] INSITU STM OBSERVATIONS OF THE ETCHING OF N-SI(111) IN NAOH SOLUTIONS [J].

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[5]

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[9] ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].

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[10] ATOMIC AND GROUP ELECTRONEGATIVITIES FROM THE ELECTRON-DENSITY DISTRIBUTIONS OF MOLECULES [J].

BOYD, RJ ;

EDGECOMBE, KE .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (13) :4182-4186

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