Barriers for copper interconnections

被引：27

作者：

Wong, SS ^{[1
]}

Ryu, C ^{[1
]}

Lee, H ^{[1
]}

Kwon, KW ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS | 1998年 / 514卷

关键词：

D O I：

10.1557/PROC-514-75

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The integration of Cu interconnections will require sophisticated structures to prevent Cu from coming into contact with devices. The barriers for Cu also must have good adhesion with dielectric and Cu, and yield desirable microstructure of Cu. This paper discusses several critical barrier requirements and compares the properties of Ta and Ti/TiN barrier systems.

引用

页码：75 / 81

页数：7