Backside-illuminated silicon photodiode array for an integrated spectrometer

被引:15
作者
Kwa, TA
Sarro, PM
Wolffenbuttel, RF
机构
[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,LAB ELECT INSTURMENTAT,NL-2628 CD DELFT,NETHERLANDS
[2] DELFT INST MICROELECT & SUBMICRON TECHNOL,NL-2600 GB DELFT,NETHERLANDS
关键词
D O I
10.1109/16.568037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A p(+)-n, backside-illuminated photodiode array, to be used in an integrated silicon spectrometer, has been fabricated and characterized, For this type of application, illumination from the back is essential, The array is suspended in a nitride membrane for enhanced electrical and thermal isolation from the micromachined bulk, To prevent illumination from the front, the array is entirely covered with an aluminum layer, which also enhances the spectral responsivity. A model is described with which the performance of the backside-illuminated array was predicted, Furthermore, the performance of the photodiode array is compared to that of a conventional, front-illuminated array.
引用
收藏
页码:761 / 765
页数:5
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