CuGaSe2 solar cells prepared by MOVPE

被引：15

作者：

Siebentritt, S ^{[1
]}

Bauknecht, A ^{[1
]}

Gerhard, A ^{[1
]}

Fiedeler, U ^{[1
]}

Kampschulte, T ^{[1
]}

Schuler, S ^{[1
]}

Harneit, W ^{[1
]}

Brehme, S ^{[1
]}

Albert, J ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

CuGaSe2; conductivity; mobility; solar cells;

D O I：

10.1016/S0927-0248(00)00272-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Metal organic vapor-phase epitaxy (MOVPE) is used to prepare epitaxial reference films and solar cells based on CuGaSe2. Room temperature Hall measurements are performed on epitaxial CuGaSe2. Conductivities up to 0.7(Omega cm)(-1) were obtained. Highest mobilities of 270cm(2)/Vs are observed for near stoichiometric slightly Ga-rich films. Net charge carrier concentration is higher in the Cu-rich grown films than in the Ga-rich films. Solar cells with epitaxial absorber are prepared that reach efficiencies of 3.3%. First polycrystalline solar cells are grown on Mo/glass at reduced substrate temperatures. Under AM1.5 illumination open-circuit voltages up to 740mV and efficiencies of 2.0% are obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：129 / 136

页数：8

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