Undercooling and solidification of Si by electromagnetic levitation

被引：104

作者：

Liu, RP ^{[1
]}

Volkmann, T ^{[1
]}

Herlach, DM ^{[1
]}

机构：

[1] DLR German Aerosp Ctr, Inst Space Simulat, D-51170 Cologne, Germany

来源：

ACTA MATERIALIA | 2001年 / 49卷 / 03期

关键词：

rapid solidification; silicon; nucleation; growth;

D O I：

10.1016/S1359-6454(00)00330-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pure Si droplets were containerlessly undercooled using an electromagnetic levitation method. An undercooling up to 330 K prior to solidification has been reproducibly achieved for bulk samples in size of 10 mm. A transition from faceted growth at lower undercoolings to continuous growth at higher undercoolings was observed through analyses of changes in phase morphologies on the surface of the samples. The transition was caused by existence of a large kinetic undercooling. The nucleation frequency and the crystal/melt interfacial energy are discussed within the frame of Spaepen's model in terms of the structure of the interface. (C) 2001 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：439 / 444

页数：6

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