High-speed monolithic silicon photoreceivers on high resistivity and SOI substrates

We compare monolithic silicon optical receivers fabricated on high resistivity and silicon-on-insulator (801) substrates, Each receiver consisted of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At a drain voltage (V-DD) of 3.5 V, a photodiode voltage (V-PD) of 30 V, and a wavelength of 850 nm, the high resistivity receiver exhibited sensitivities of -31.9 dBm at 622 Mb/s and -23.2 dBm at the maximum operating speed of 1.0 Gb/s, At V-DD = 5 V and V-PD = 20 V,the sensitivity of the SOI receiver was -26.1 dBm at 622 Mb/s, -20.2 dBm at 1.0 Gb/s and -12.2 dBm at the maximum speed of 2.0 Gb/s, Single supply operation at 5 V and 3 V was also demonstrated for the SOI receiver. Methods for extending the speed and improving the sensitivity characteristics in more advanced technologies with lower supply voltages are discussed.