Electric-field assisted growth and self-assembly of intrinsic silicon nanowires

被引：93

作者：

Englander, O ^{[1
]}

Christensen, D

Kim, J

Lin, LW

Morris, SJS

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 04期

关键词：

D O I：

10.1021/nl050109a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.

引用

页码：705 / 708

页数：4

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