Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface

被引:19
作者
Evstratov, IY
Kalaev, VV
Nabokov, VN
Zhmakin, AI
Makarov, YN [1 ]
Abramov, AG
Ivanov, NG
Rudinsky, EA
Smirnov, EM
Lowry, SA
Dornberger, E
Virbulis, J
Tomzig, E
Von Ammon, W
机构
[1] Univ Erlangen Nurnberg, Fluid Mech Inst, Nurnberg, Germany
[2] Soft Impact Ltd, St Petersburg, Russia
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] State Tech Univ St Petersburg, St Petersburg, Russia
[5] CFD Res Corp, Huntsville, AL USA
[6] Wacker Siltron, Burghausen, Germany
关键词
silicon; Czochralski crystal growth; turbulent convection; oxygen transport; simulation;
D O I
10.1016/S0167-9317(00)00516-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt convection is presented. Global heat and mass transport is calculated using an axisymmetrical quasi-steady-state approximation with accounting for radiative heat exchange, heat conduction in solid parts, inert gas flow, and turbulent melt convection. The global transport calculations provide adequate boundary conditions for comprehensive investigation of melt turbulent convection using 3D LES. The LES of the melt how describes the temperature distribution and impurity transport in the melt much better than 2D turbulent flow models. Moreover, the 3D calculations provide complete information with respect to thermal fluctuations in the melt and to non-uniformity of the crystallization process at the melt-crystal interface. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:139 / 142
页数:4
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