Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases

被引：66

作者：

Sheu, JK

Su, YK

Chi, GC

Jou, MJ

Liu, CC

Chang, CM

Hung, WC

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

[3] Epistar Corp, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.369188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work investigates inductively coupled plasma (ICP) etching processes of GaN. Etching behaviors are also characterized by varying the ICP power, Cl-2/Ar or Cl-2/N-2 mixing ratio, radio-frequency (rf) power, and chamber pressure. Experimental results indicate that the etching profiles are highly anisotropic over the range of etching conditions. Maximum etching rates of 8200 Angstrom/min in Cl-2/Ar plasma and 8330 Angstrom/min in Cl-2/N-2 plasma are obtained as well. In addition, pressure, ICP power, Cl-2/Ar(N-2) flow ratio and rf power significantly influence etching rate and surface morphology. In particular, dc bias heavily influences the etching rates, suggesting that the ion-bombardment effect is an important factor of these etching processes. (C) 1999 American Institute of Physics. [S0021-8979(99)03903-1].

引用

页码：1970 / 1974

页数：5

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