Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires

被引：224

作者：

Sköld, N ^{[1
]}

Karlsson, LS ^{[1
]}

Larsson, MW ^{[1
]}

Pistol, ME ^{[1
]}

Seifert, W ^{[1
]}

Trägårdh, J ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Nanometer Struct Consortium, SE-22100 Lund, Sweden

来源：

NANO LETTERS | 2005年 / 5卷 / 10期

关键词：

D O I：

10.1021/nl051304s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.

引用

页码：1943 / 1947

页数：5

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