Stacking fault and dislocation glide on the basal plane of graphite

被引:53
作者
Telling, RH [1 ]
Heggie, MI [1 ]
机构
[1] Univ Sussex, Brighton BN1 9QJ, E Sussex, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1080/0950083031000137839
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Generalized stacking-fault energies for the basal plane of graphite are calculated from first principles for slip along two high-symmetry directions. The rhombohedral fault energy compares well with experiment and the anisotropy in behaviour is consistent with observed dislocation network geometry. Utilizing these calculated fault energies within a modified Peierls-Nabarro model, we estimate the barrier for basal dislocation motion based on lattice friction. This is found to be extremely small, from which we conclude that dislocation network interaction and pinning, rather than the Peierls barrier, must determine the practical shear strength of graphite. However, at low dislocation densities or over small crystallite regions, the shear strength should tend to this lower limit. We discuss the relevance of this to the mechanism of lubrication.
引用
收藏
页码:411 / 421
页数:11
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