Top surface imaging resists for EUV lithography

被引：22

作者：

Henderson, C ^{[1
]}

Wheeler, D ^{[1
]}

Pollagi, T ^{[1
]}

O'Connell, D ^{[1
]}

Goldsmith, J ^{[1
]}

Fisher, A ^{[1
]}

Cardinale, G ^{[1
]}

Hutchinson, J ^{[1
]}

Rao, V ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES II | 1998年 / 3331卷

关键词：

thin layer imaging; top surface imaging; extreme ultraviolet lithography; silylation; disilane;

D O I：

10.1117/12.309590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The strong attenuation of extreme ultraviolet (EUV) radiation by organic materials necessitates the use of a thin layer imaging (TLI) process for EUV lithography. Several TLI processes have been identified for potential use for EUVL, and the common theme in these approaches is the transfer of the aerial image to a thin layer of refractory-containing material, which is then used as a dry O-2 etch mask during a subsequent pattern transfer to the device layer. One TLI process that has been extensively examined for EUVL is the silylated top-surface imaging (TSI) technology, which is discussed in this paper. Using a new disilane silylation reagent, dimethylaminodimethyldisilane (DMDS) and 13.4 nm exposure, the TSI process has been used to print 100 nm lines and spaces at equal pitch and 70 nm lines and spaces at a higher 1:2 pitch. The line edge roughness for the printed lines has been determined using a custom image analysis program and, as expected, varies with the particular EUV exposure system and numerical aperture. Exposures done with 193 nm lithography and the TSI process using DMDS are also shown for comparison to the EUV results.

引用

页码：32 / 40

页数：9