Optoelectronic realisation of NOR logic gate using chaotic two-section lasers

被引:49
作者
Chlouverakis, KE [1 ]
Adams, MJ [1 ]
机构
[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England
关键词
D O I
10.1049/el:20058026
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Theoretical construction of the fundamental NOR gate using two-section laser diodes subject to optical injection is reported. Two self-pulsating laser diodes are commonly driven by a monochromatic light beam resulting in chaos and the logic gate is finally implemented by appropriately synchronising the two chaotic attractors.
引用
收藏
页码:359 / 360
页数:2
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