Status of nitride based light emitting and laser diodes on SiC

被引：13

作者：

Doverspike, K ^{[1
]}

Bulman, GE ^{[1
]}

Sheppard, ST ^{[1
]}

Kong, HS ^{[1
]}

Leonard, M ^{[1
]}

Dieringer, H ^{[1
]}

Weeks, TW ^{[1
]}

Edmond, J ^{[1
]}

Brown, JD ^{[1
]}

Swindle, JT ^{[1
]}

Schetzina, JF ^{[1
]}

Song, YK ^{[1
]}

Kuball, M ^{[1
]}

Nurmikko, A ^{[1
]}

机构：

[1] Cree Res Inc, Durham, NC 27713 USA

来源：

NITRIDE SEMICONDUCTORS | 1998年 / 482卷

关键词：

D O I：

10.1557/PROC-482-1169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single crystal thin films with compositions from the AlN-InN-GaN system were grown via metal-organic chemical vapor deposition (MOCVD) on single crystal 6H-SiC substrates. Blue light emitting (LED) and laser diode (LD) structures were fabricated. The conducting buffer layer LEDs employed an AlGaN buffer layer which provides a conduction path between SiC and the active device region. The external quantum efficiency of the LEDs was 3% at 20 mA- 3.6V and peak emission wavelength of 430 nm. Violet and blue LDs were fabricated and consisted of an 8-well InGaN/GaN multiple quantum well (MQW) active region in a separate confinement heterostructure (SCH) design. Lasing was obtained both on structures using an insulating buffer layer, and also on structures using a conducting buffer layer. The resulting lasers operated at room temperature using pulsed and continuous wave operation with an emission wavelength of 404-435 nm. The lowest threshold current density obtained for lasing was 11 kA/cm(2).

引用

页码：1169 / 1178

页数：10