30-GHz bandwidth 1.55-mu m strain-compensated InGaAlAs-InGaAsP MQW laser

被引：83

作者：

Matsui, Y ^{[1
]}

Murai, H ^{[1
]}

Arahira, S ^{[1
]}

Kutsuzawa, S ^{[1
]}

Ogawa, Y ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,SEMICOND TECHNOL LAB,HACHIOJI,TOKYO 193,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 01期

关键词：

semiconductor laser diodes; multiple quantum well; strain compensation; modulation characteristics; damping factor;

D O I：

10.1109/68.554159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed 1.55 mu m laser diodes with a 3-dB modulation bandwidths of 30 GHz were fabricated by using short-cavity mushroom structures with undoped, strain-compensated InGaAlAs-InGaAsP twenty-quantum-well active regions, The bandwidths were achieved at low bias current of 100 mA, The laser exhibited a high differential gain of 1.54 x 10(-15) cm(2) and a small K factor of 0.135 ns, These results were achieved by using an In0.386Ga0.465AlAs barrier with 0.83% tensile strain to reduce the thermal emission time of holes from wells and hence the hole transport time.

引用

页码：25 / 27

页数：3

共 7 条

[1] EFFECT OF STRAIN ON THE RESONANT-FREQUENCY AND DAMPING FACTOR IN INGAAS/INP MULTIPLE QUANTUM-WELL LASERS [J].

FUKUSHIMA, T ;

BOWERS, JE ;

LOGAN, RA ;

TANBUNEK, T ;

TEMKIN, H .

APPLIED PHYSICS LETTERS, 1991, 58 (12) :1244-1246

[2] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].

OLSHANSKY, R ;

HILL, P ;

LANZISERA, V ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418

[3] CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS [J].

RALSTON, JD ;

WEISSER, S ;

ESQUIVIAS, I ;

LARKINS, EC ;

ROSENZWEIG, J ;

TASKER, PJ ;

FLEISSNER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1648-1659

[4] THEORETICAL-ANALYSIS OF GAIN SATURATION COEFFICIENTS IN INGAAS/ALGAAS STRAINED LAYER QUANTUM-WELL LASERS [J].

SEKI, S ;

SOTIRELIS, P ;

HESS, K ;

YAMANAKA, T ;

YOKOYAMA, K .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2147-2149

[5] OPTICAL-CONFINEMENT-FACTOR DEPENDENCIES OF THE K-FACTOR, DIFFERENTIAL GAIN, AND NONLINEAR GAIN COEFFICIENT FOR 1.55 MU-M INGAAS/INGAASP MQW AND STRAINED-MQW LASERS [J].

SHIMIZU, J ;

YAMADA, H ;

MURATA, S ;

TOMITA, A ;

KITAMURA, M ;

SUZUKI, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :773-776

[6] RESONANCE FREQUENCY, DAMPING, AND DIFFERENTIAL GAIN IN 1.5 MU-M MULTIPLE QUANTUM-WELL LASERS [J].

TATHAM, MC ;

LEALMAN, IF ;

SELTZER, CP ;

WESTBROOK, LD ;

COOPER, DM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (02) :408-414

[7] DEPENDENCE OF HIGH-SPEED PROPERTIES ON THE NUMBER OF QUANTUM-WELLS IN 1.55 MU-M INGAAS-INGAASP MQW LAMBDA/4-SHIFTED DFB LASERS [J].

UOMI, K ;

AOKI, M ;

TSUCHIYA, T ;

TAKAI, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (02) :355-360

← 1 →