Magnetic properties, structure and shape-memory transitions in Ni-Mn-Ga thin films grown by ion-beam sputtering

被引:33
作者
Ahn, JP
Cheng, N
Lograsso, T
Krishnan, KM
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Iowa State Univ Sci & Technol, Ames Lab, Mat Preparat Lab, Ames, IA 50011 USA
关键词
ion beam sputtering; magnetic actuation in MEMS; Ni-Mn-Ga; shape memory alloy thin films;
D O I
10.1109/20.951103
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ni1-2xMnxGax (x similar to 0.2 and 0.25) alloys in thin film form were prepared by ion-beam sputtering from alloy targets. For Si(001) substrates the structure/texture of the films are a function of the growth temperature (T-g). The tetragonal martensite structure with a (220) texture was obtained for an optimal T-g similar to 300-350 degreesC. At higher temperatures a cubic silicide (Mn12Ni4Si3) was obtained. At room temperature, optimal films with the stoichiometric composition (x similar to 0.2) showed a ferromagnetic hysteresis behavior characterized by significant in-plane rotation. The coercivity of the films was 310 Oe and temperature-dependent measurements confirmed a Curie temperature, T-c similar to 340 K. At room temperature the films show a modulated 7M martensite structure which was observed in in situ heating experiments to transforms to the cubic austenite phase at 500 degreesC.
引用
收藏
页码:2141 / 2143
页数:3
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