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Role of hydrogen in C and Si(001) homoepitaxy - Comment

被引：4
作者：
Copel, M
Tromp, RM
机构：
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.76.2603
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：2603 / 2603
页数：1
相关论文
共 5 条
[1]   EFFECT OF HYDROGEN ON SURFACE ROUGHENING DURING SI HOMOEPITAXIAL GROWTH [J].
ADAMS, DP ;
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[2]   H-COVERAGE DEPENDENCE OF SI(001) HOMOEPITAXY [J].
COPEL, M ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1994, 72 (08) :1236-1239
[3]   EFFECT OF H ON SI MOLECULAR-BEAM EPITAXY [J].
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ADAMS, DP ;
YALISOVE, SM .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6615-6618
[4]   ROLE OF HYDROGEN IN C AND SI(001) HOMOEPITAXY [J].
OGITSU, T ;
MIYAZAKI, T ;
FUJITA, M ;
OKAZAKI, M .
PHYSICAL REVIEW LETTERS, 1995, 75 (23) :4226-4229
[5]   EFFECTS OF HYDROGEN IMPURITIES ON THE DIFFUSION, NUCLEATION, AND GROWTH OF SI ON SI(001) [J].
VASEK, JE ;
ZHANG, ZY ;
SALLING, CT ;
LAGALLY, MG .
PHYSICAL REVIEW B, 1995, 51 (23) :17207-17210
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