A 48x48 CdZnTe array with multiplexer readout

被引:27
作者
Marks, DG
Barber, HB
Barrett, HH
Dereniak, EL
Eskin, JD
Matherson, KJ
Woolfenden, JM
Young, ET
Augustine, FL
Hamilton, WJ
Venzon, JE
Apotovsky, BA
Doty, FP
机构
[1] UNIV ARIZONA,DEPT RADIOL,TUCSON,AZ 85724
[2] UNIV ARIZONA,STEWARD OBSERV,TUCSON,AZ 85721
[3] AUGUSTINE ENGN,ENCINITAS,CA 92024
[4] SANTA BARBARA RES CTR,GOLETA,CA 93117
[5] DIGIRAD,SAN DIEGO,CA 92121
基金
美国国家卫生研究院;
关键词
D O I
10.1109/23.506673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report results of gamma-ray imaging and energy-resolution tests of a 48x48 CdZnTe array. Our detectors have 125 mu m square pixel electrodes produced by photolithography and are indium-bump-bonded to a multiplexer readout circuit. Using a collimated beam of 140 keV gamma rays of 120 mu m diameter centered on one pixel, we found that the majority of events produced significant charge deposition in nearby pixels. Charge and energy are transported out of the pixel by charge diffusion, photoelectron range, Compton scattering, and escape of K x rays. These effects also distort single-pixel spectra, although photopeaks are still discernible at 140 keV. When signals from neighboring pixels are summed together to correct for this charge spreading, an energy resolution of 10 keV is obtained at 140 keV. Corrections will be simple; and energy resolution should be better for the 380 mu m pixels of the 64x64 CdZnTe arrays we are constructing for an ultra-high-resolution brain imager.
引用
收藏
页码:1253 / 1259
页数:7
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