Liquid-phase deposition of low-Kk organic silicon-oxide films

被引：8

作者：

Usami, K ^{[1
]}

Sugahara, S ^{[1
]}

Sumimura, K ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Meguro Ku, Tokyo 1528550, Japan

来源：

LOW-DIELECTRIC CONSTANT MATERIALS IV | 1998年 / 511卷

关键词：

D O I：

10.1557/PROC-511-27

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-K silica films were grown from the liquid phase using methyl-triethoxy-silane. Physical and chemical properties were investigated together with electronic properties. The film had dense methyl groups and showed insulating characteristics even under as-grown conditions. The dielectric constant, low-field resistivity and breakdown field-strength were 3.6, 10(13)Omega cm and 1MV/cm, respectively, for the as-grown film. They were improved to 2.6, more than 10(15)Omega cm and more than 3MV/cm, respectively, after 300 degrees C vacuum annealing.

引用

页码：27 / 32

页数：6