Saturation of the internal photoemission effect in forward biased silicon junctions

被引：3

作者：

Saenz, ML ^{[1
]}

Perez, JMG ^{[1
]}

机构：

[1] UNIV COMPLUTENSE MADRID, FAC CIENCIAS FIS,DEPT OPT, E-28040 MADRID, SPAIN

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.54.7662

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior of the far-infrared laser-induced negative photoeffect in silicon homojunctions as a function of irradiation intensities is reported. A rate equation model treating this effect as a laser-heated hot-carrier internal photoemission is presented. The model predictions are compared to experimental results measured at 80 K, showing good agreement.

引用

页码：7662 / 7665

页数：4

共 7 条

[1]

[Anonymous], SEMICONDUCTORS

[2]

Ashmontas S., 1985, Bulletin of the Academy of Sciences of the USSR, Physical Series, V49, P115

[3]

ASHMONTAS SP, 1986, SOV PHYS SEMICOND+, V20, P1382

[4]

Saenz ML, 1996, APPL PHYS LETT, V68, P675, DOI 10.1063/1.116588

[5] EVIDENCE OF INTERNAL PHOTOEMISSION IN THE CO2-LASER-INDUCED NEGATIVE POTENTIAL IN HOMOJUNCTIONS [J].

SAENZ, ML ;

PEREZ, JMG .

PHYSICAL REVIEW B, 1995, 52 (15) :11120-11124

[6]

SANZ FE, 1993, PHYS REV B, V47, P4517

[7] HOT PHOTO-CARRIER AND HOT-ELECTRON EFFECTS IN P-N-JUNCTIONS [J].

UMENO, M ;

SUGITO, Y ;

JIMBO, T ;

HATTORI, H ;

AMEMIYA, Y .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :191-195

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