Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

被引：14

作者：

Fang, XM ^{[1
]}

Chao, IN

Strecker, BN

McCann, PJ

Yuan, S

Liu, WK

Santos, MB

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA

[3] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[4] Quantum Epitaxial Designs Inc, Bethlehem, PA 18015 USA

[5] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.589965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report results on the incorporation of Bi (n type) and Tl (p-type) impurity in PbSe and PbEuSe grown on CaF2/Si(111) by molecular beam epitaxy. Bi2Se3, and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 10(19) cm(-3) range and hole concentrations in the middle 10(18) cm(-3) range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and hole mobilities are comparable to those for PbSe and PbEuSe grown on BaF2. (C) 1998 American Vacuum Society.

引用

页码：1459 / 1462

页数：4

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