Bright oligothiophene-based light emitting diodes

被引：43

作者：

Mazzeo, M

Pisignano, D

Favaretto, L

Barbarella, G

Cingolani, R

Gigli, G

机构：

[1] INFM, NNL, I-73100 Lecce, Italy

[2] Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[3] CNR, ISOF, I-40129 Bologna, Italy

来源：

SYNTHETIC METALS | 2003年 / 139卷 / 03期

关键词：

OLED; oligothiophenes; quantum yield;

D O I：

10.1016/S0379-6779(03)00304-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate bright and efficient spin-coated yellow organic light emitting diodes (OLEDs) employing as active medium a novel thiophene-based compound, in which the conventional linear structure of the oligothiophenes has been replaced by a branched benzo[b]thiophene-based structure. Such a structure, combined with the oxygen functionalization of the core-thienyl sulphur atom and the cyclohexyl substitution of the lateral thienyl rings, allowed us to obtain a brightness up to 10,500cd/m(2) and an external quantum efficiency up to 0.48%, which are the highest values so far obtained by substituted oligothiophene-based compounds. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：671 / 673

页数：3

共 10 条

[1] High-efficiency fluorescent organic light-emitting devices using a phosphorescent sensitizer [J].