Fabrication of La2Zr2O7 buffer layers on Ni tapes by reel-to-reel sol-gel technique

被引:26
作者
Celik, E
Akin, Y
Sigmund, W
Hascicek, YS
机构
[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[2] Dokuz Eylul Univ, Dept Met & Mat Engn, TR-35100 Izmir, Turkey
[3] Japan Fine Ceram Ctr, ISTEC, Supercond Res Lab, Nagoya, Aichi 4568587, Japan
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 106卷 / 02期
基金
美国国家科学基金会;
关键词
LZO; alkoxides; sol-gel; buffer layers; annealing; TEA; texture; Ni tape; YBCO; HTS;
D O I
10.1016/j.mseb.2003.09.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to investigate the optimal conditions for highly orientated and epitaxial buffer layers on textured Ni tapes, we have deposited perovskite textured La2Zr2O7 (LZO) films on Ni tapes using a reel-to-reel sol-gel process for fabrication of second generation high-T-c superconductors. Of these usual parameters, precursor types, solvents, chelating agents, and annealing conditions were chosen to prepare LZO solutions. This effect on epitaxial growth of LZO of these processing and texturing parameters was evaluated using X-ray diffraction (XRD), environment scanning electron microscopy (ESEM), energy dispersive spectrometry (EDS) and orientation imaging microscope (OIM), atomic force microscope (AFM) and X-ray pole figure analysis. Based on the following results, we have found textured, homogenous, dense, crack free and pinhole free, LZO films with a strong c-axis orientation on textured Ni tapes by post-annealing at 1150degreesC for 10 min under 4% H-2-Ar gas flow. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:182 / 190
页数:9
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