Carrier leakage blocking effect of high temperature sputtered TiO2film on dye-sensitized mesoporous photoelectrode

被引：51

作者：

Hattori, Ryo

Goto, Hajime

机构：

[1] Ion Engn Res Inst Corp, Osaka 5730128, Japan

[2] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 20-21期

关键词：

carrier leakage blocking; sputtered TiO2 film; rutile crystalline film; mesoporous electrode; dye-sensitized solar cell;

D O I：

10.1016/j.tsf.2007.03.079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated to find the optimal sputtering conditions for the forming of a titanium oxide (TiO2) film as short-circuit preventive layer (blocking layer) between conductive transparent electrode and porous TiO2 film in the dye-sensitized solar cell (DSC). The conversion efficiency (eta) was improved so that the electrode substrate temperature and Ar gas pressure during sputtering were high. From the results of X-ray diffraction and Raman inspections, it indicates that sputtered TiO2 blocking layer should be rutile crystalline for higher performance of DSC. (c) 2007 Published by Elsevier B.V.

引用

页码：8045 / 8049

页数：5

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