A simulation study of high voltage 4H-SiC IGBTs

被引：8

作者：

Wang, J ^{[1
]}

Williams, BW ^{[1
]}

机构：

[1] Heriot Watt Univ, Dept Comp & Elect Engn, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 07期

关键词：

D O I：

10.1088/0268-1242/13/7/026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.

引用

页码：806 / 815

页数：10