RBS/simulated annealing analysis of iron-cobalt silicides

被引:47
作者
Barradas, NP [1 ]
Jeynes, C [1 ]
Harry, MA [1 ]
机构
[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England
关键词
Rutherford backscattering spectrometry; simulated annealing; iron-cobalt silicide;
D O I
10.1016/S0168-583X(97)00809-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Iron and cobalt were implanted into silicon, to total doses of 5 x 10(17) /cm(2), leading to a ternary silicide layer. Different implantation energies and annealing procedures were used, leading to distinct depth distributions of the Co and Fe. The samples were analysed with Rutherford backscattering. The signals of the neighbouring elements iron and cobalt overlap due to their similar mass, leading to complex spectra requiring difficult and time-consuming deconvolution using traditional analysis packages. The combinatorial optimisation simulated annealing algorithm was used to analyse the data. The only human input required is the elements present in the sample, without any further intervention necessary. The algorithm is able to effectively deconvolute the Fe and Co signals in about 2 min using a Pentium processor running at 200 MHz, and individual depth profiles for the elements are obtained. The spectra are fitted very closely, and the results obtained were confirmed by separate X-ray photoelectron spectroscopy (XPS) and Cross sectional transmission electron microscopy (XTEM) experiments on the same samples. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:1163 / 1167
页数:5
相关论文
共 13 条
[1]  
AARTS, 1989, SIMULATED ANNEALING
[2]   Simulated annealing analysis of Rutherford backscattering data [J].
Barradas, NP ;
Jeynes, C ;
Webb, RP .
APPLIED PHYSICS LETTERS, 1997, 71 (02) :291-293
[3]  
Bevington P., 2002, Data Reduction and Error Analysis for the Physical Sciences, V3rd ed.
[4]   A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE [J].
BOST, MC ;
MAHAN, JE .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :2034-2037
[5]   OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].
BOST, MC ;
MAHAN, JE .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703
[6]  
CORRE CL, 1972, PHYS STATUS SOLIDI B, V51, pK85
[7]   ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS [J].
DIMITRIADIS, CA ;
WERNER, JH ;
LOGOTHETIDIS, S ;
STUTZMANN, M ;
WEBER, J ;
NESPER, R .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1726-1734
[8]  
DOOLITTLE LR, 1985, NUCL INSTRUM METH B, V9, P291
[9]   Structural properties of ion beam synthezised iron-cobalt silicide [J].
Harry, MA ;
Curello, G ;
Finney, MS ;
Reeson, KJ ;
Sealy, BJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (07) :1822-1830
[10]   AN ADAPTIVE SIMULATED ANNEALING ALGORITHM FOR GLOBAL OPTIMIZATION OVER CONTINUOUS-VARIABLES [J].
JONES, AEW ;
FORBES, GW .
JOURNAL OF GLOBAL OPTIMIZATION, 1995, 6 (01) :1-37