Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

被引：3

作者：

Meisels, R

Dybko, K

Ziouzia, F

Kuchar, F

Deutschmann, R

Abstreiter, G

Hein, G

Pierz, K

机构：

[1] Univ Min & Met Leoben, Inst Phys, A-8700 Leoben, Austria

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Phys Tech Bundesanstalt, D-38023 Braunschweig, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 10卷 / 1-3期

关键词：

quantum Hall effect; electron spin resonance; GaAs/GaAlAs heterostructure; two-dimensional electron system;

D O I：

10.1016/S1386-9477(01)00053-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-sigma (xx)(B) conductivity component. The ESR is investigated at integer (v = 1) and fractional filling factors (v < 1) via the change DeltaR(xx) of the magnetoresistance in high- and low-mobility samples. The DC-sigma (xx)(B) peaks in the integer quantum Hall effect regime show scaling behaviour. The peak widths obey power laws with exponents of about 0.4 (strong spin splitting) and 0.2 (no spin splitting, one critical energy in the Landau level centre). By assuming two critical energies in the latter case we obtain exponents close to 0.4. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：57 / 61

页数：5

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