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Time-resolved photoluminescence measurements of InGaN light-emitting diodes

被引：79
作者：
Pophristic, M
Long, FH
Tran, C
Ferguson, IT
Karlicek, RF
机构：
[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA
[2] EMCORE Corp, Somerset, NJ 08873 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期
关键词：
D O I：
10.1063/1.122843
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have used time-resolved photoluminescence (PL) to examine light-emitting diodes made of InGaN/GaN multiple quantum wells (MQWs) before the final stages of processing. The time-resolved photoluminescence from a dim MQW was quenched by nonradiative recombination centers. The PL kinetics from a bright MQW were not single exponential but stretched exponential, with the stretch parameter beta = 0.59 +/- 0.05. The emission lifetime varied with energy, within error beta was independent of the emission energy. The stretched exponential kinetics are consistent with significant disorder in the material. We attribute the disorder to spatial fluctuations of the local indium concentration. (C) 1998 American Institute of Physics. [S00036951(98)02450-4].
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页码：3550 / 3552
页数：3
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