Time-resolved photoluminescence measurements of InGaN light-emitting diodes

被引：79

作者：

Pophristic, M

Long, FH

Tran, C

Ferguson, IT

Karlicek, RF

机构：

[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[2] EMCORE Corp, Somerset, NJ 08873 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used time-resolved photoluminescence (PL) to examine light-emitting diodes made of InGaN/GaN multiple quantum wells (MQWs) before the final stages of processing. The time-resolved photoluminescence from a dim MQW was quenched by nonradiative recombination centers. The PL kinetics from a bright MQW were not single exponential but stretched exponential, with the stretch parameter beta = 0.59 +/- 0.05. The emission lifetime varied with energy, within error beta was independent of the emission energy. The stretched exponential kinetics are consistent with significant disorder in the material. We attribute the disorder to spatial fluctuations of the local indium concentration. (C) 1998 American Institute of Physics. [S00036951(98)02450-4].

引用

页码：3550 / 3552

页数：3

共 27 条

[21] TIME-SCALE INVARIANCE IN TRANSPORT AND RELAXATION [J].

SCHER, H ;

SHLESINGER, MF ;

BENDLER, JT .

PHYSICS TODAY, 1991, 44 (01) :26-34

[22] FRACTAL TIME IN CONDENSED MATTER [J].

SHLESINGER, MF .

ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1988, 39 :269-290

[23] Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature [J].

Sun, CK ;

Chiu, TL ;

Keller, S ;

Wang, G ;

Minsky, MS ;

DenBaars, SP ;

Bowers, JE .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :425-427

[24] Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells [J].

Takeuchi, T ;

Sota, S ;

Katsuragawa, M ;

Komori, M ;

Takeuchi, H ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (4A) :L382-L385

[25] Optical properties of strained AlGaN and GaInN on GaN [J].

Takeuchi, T ;

Takeuchi, H ;

Sota, S ;

Sakai, H ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2B) :L177-L179

[26]

TRAN C, IN PRESS J CRYST GRO

[27]

TRAN C, 1998, GROWTH HIGH EFFICIEN

← 1 2 3 →