The nature of damage in ion-implanted and annealed diamond

被引:113
作者
Kalish, R [1 ]
Reznik, A
Nugent, KW
Prawer, S
机构
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
[3] Univ Melbourne, Sch Phys, Parkville, Vic 3052, Australia
关键词
ion implantation; damaged diamond; interstitials; annealing graphitization;
D O I
10.1016/S0168-583X(98)00857-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The nature of damage in diamond and its annealing are studied by monitoring the changes in electrical conductivity, material density and Raman spectra as a function of density of defects (implantation dose) and annealing temperature, Use is made of the marked differences between the properties of diamond and graphite to study the kinetics of the structural transformation of damaged diamond upon annealing. It is found that for low dose implantations (which create damage below a certain critical density N-c) the damaged diamond is rich in point defects and anneals back to diamond, via some well-defined defect states (most likely the split interstitial [100] dumbbell). In contrast, implantation to doses which create damage in excess of N-c. results in a fully amorphized. mostly sp(2) bonded, material which converts to graphite upon annealing. The onset of graphitization for heavily damaged diamond is found to be at about 800 K. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:626 / 633
页数:8
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