Microwave-power handling capability of HgBa2CaCu2O6+δ superconducting microstrip lines

被引:16
作者
Aga, RS [1 ]
Xie, YY [1 ]
Yan, SL [1 ]
Wu, JZ [1 ]
Han, SYS [1 ]
机构
[1] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
关键词
D O I
10.1063/1.1409950
中图分类号
O59 [应用物理学];
学科分类号
摘要
Measurement of microwave-power handling capability, performed on high-temperature superconducting HgBa2CaCu2O6+delta (Hg-1212) microstrip lines, was carried out at a microwave frequency of 1 GHz and temperatures ranging from 77 to 120 K. These samples were prepared using a different route in which direct patterning on Hg-1212 was avoided to minimize their moisture exposure. Microwave input power was swept to high levels to drive the samples from a linear (less dissipative) state into nonlinear (more dissipative) state. Critical input power (P-c) was determined to be the crossover between the two states. The P-c values observed for Hg-1212 microstrip lines were 29.3, 25.8, 23, and 16 dBm at 80, 90, 100, and 110 K, respectively. These P-c values, comparable with the best obtained so far on other superconductors at lower temperatures, are orders of magnitude better at 100 K or higher, suggesting that Hg-1212 is promising for microwave devices and circuits operating above 100 K or higher temperatures. (C) 2001 American Institute of Physics.
引用
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页码:2417 / 2419
页数:3
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