Switching behavior of the soft breakdown conduction characteristic in ultrathin (<5 nm) oxide MOS capacitors

被引：33

作者：

Miranda, E ^{[1
]}

Sune, J ^{[1
]}

Rodriguez, R ^{[1
]}

Nafria, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

来源：

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | 1998年

关键词：

D O I：

10.1109/RELPHY.1998.670440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In agreement with recently published results, when an ultra-thin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can occur prior to the final dielectric breakdown. After the occurrence of such failure events, the current-voltage (I-V) characteristic corresponds to the superposition of highly conductive spots and background conduction through the undegraded capacitor area. In this conduction regime, the application of a low constant voltage gives rise to large leakage current fluctuations in the form of random telegraph noise. These fluctuations are demonstrated to correspond to ON/OFF switching events of one or more local conduction spots, and not to a modulation of their conductance. The experimental soft-breakdown I-V characteristics are shown to be better understood if the spot conduction is considered to be locally limited by the silicon electrodes and not by the oxide.

引用

页码：42 / 46

页数：5

Switching behavior of the soft breakdown conduction characteristic in ultrathin (&lt;5 nm) oxide MOS capacitors

Switching behavior of the soft breakdown conduction characteristic in ultrathin (<5 nm) oxide MOS capacitors