Preparation and characterization of thin films by plasma polymerization of hexamethyldisiloxane

被引：37

作者：

Lee, SH ^{[1
]}

Lee, DC ^{[1
]}

机构：

[1] Inha Univ, Dept Elect Engn, Nam Gu, Inchon 402751, South Korea

来源：

THIN SOLID FILMS | 1998年 / 325卷 / 1-2期

关键词：

plasma processing and deposition; Fourier transform infrared spectroscopy; auger electron spectroscopy; dielectric properties;

D O I：

10.1016/S0040-6090(98)00492-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasma polymerized hexamethyldisiloxane thin films were produced using an electrode capacitively coupled apparatus. Fourier transform infrared spectroscopy analysis indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Auger electron spectroscopy analysis indicated that the permeation depth of aluminum into the films is ca. 30 nm when top electrode is deposited by evaporation aluminum. The increase of relative dielectric constant and decrease of dielectric loss tangent with the discharge power is originated from high cross-link of the films. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：83 / 86

页数：4

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