Magnetoresistance, Hall effect, and thermoelectric power in spin valves

被引：15

作者：

Sato, H

Miya, S

Kobayashi, Y

Aoki, Y

Yamamoto, H

Nakada, M

机构：

[1] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 19203, Japan

[2] NEC Corp Ltd, Funct Devices Res Lab, Kawasaki, Kanagawa 216, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.367457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Comparison of the magnetoresistance (MR) on two groups of spin-valve multilayers, NiO/NiFe/ Cu/NiFe/Cu/NiO and NiO/NiFe/Cu/NiFe/Cu, has been made in order to investigate the possibility of the enhanced specular scattering at NiO/metal interface. No clear difference in MR between the two systems has been found, suggesting that the enhancement of specular scattering at interfaces is not the origin of the large MR. For the held direction almost perpendicular to the plane, we found a sensitive angular dependence of MR along with a large unidirectional anisotropy. To sort out any specific characteristics of the spin-valve system compared to the multilayers, thermoelectric power and Hall effect have been investigated for the first time. (C) 1998 American Institute of Physics. [S0021-8979(98)07411-8].

引用

页码：5927 / 5932

页数：6

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