Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate

被引：17

作者：

Dubrovskii, VG ^{[1
]}

Musikhin, YG

Cirlin, GÉ

Egorov, VA

Polyakov, NK

Samsonenko, YB

Tonkikh, AA

Kryzhanovskaya, NV

Bert, NA

Ustinov, VM

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190083, Russia

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 03期

关键词：

D O I：

10.1134/1.1682338

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Properties of InAs QD arrays on a <100> GaAs surface in relation to the surface temperature and InAs growth rate are studied experimentally and theoretically. A kinetic model of QD formation in heteroepitaxial growth is developed, which allows the calculation of the mean lateral size and surface density of islands as functions of the growth conditions and duration. Experimental study of optical and structural properties is performed for QDs with an effective thickness of 2 ML, grown at different substrate temperatures and growth rates. The calculated results correlate well with the experimental data. The raising of the surface temperature and slowing of the growth rate result in a considerable increase in the QD mean lateral size and a decrease in their surface density. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：329 / 334

页数：6

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