Green ThinGaN power-LED demonstrates 100 Im

被引：35

作者：

Peter, M. ^{[1
]}

Laubsch, A. ^{[1
]}

Stauss, P. ^{[1
]}

Walter, A. ^{[1
]}

Baur, J. ^{[1
]}

Hahn, B. ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778554

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent progress in the epitaxy of InGaN LEDs leads to a significant Improvement of output power for green LEDs: 100 Im at 350 mA and 189 Im at I A are demonstrated for a 1 mm(2) ThinGaN Chip at 531 nm, mounted in an OSRAM Dragon package with spherical silicone lens and OSRAM Argus lens. The chip is especially designed for low current applications like LCD backlighting where high efficiencies are needed. Efficacies of 123 Im/W at 100 mA and 80 Im/W at 350 mA have been achieved with this LED. The Influence of Multi Quantum Well emission on LED brightness was investigated in respect of driving current and temperature.

引用

页码：2050 / 2052

页数：3