Metallofullerenes in Composite Carbon Nanotubes as a Nanocomputing Memory Device

被引:84
作者
Chan, Yue [1 ]
Lee, Richard K. F. [1 ]
Hill, James M. [1 ]
机构
[1] Univ Adelaide, Sch Math Sci, Nanomech Grp, Adelaide, SA 5005, Australia
基金
澳大利亚研究理事会;
关键词
Carbon nanotube; continuous approach; energy barrier and nanocomputational device; Lennard-Jones potential; metallofullerene; MOLECULAR-DYNAMICS; FULLERENES; MECHANICS; SIMULATIONS; SCHEMATICS; TRANSPORT; ATOMS;
D O I
10.1109/TNANO.2010.2090170
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
Here, we investigate a hybrid carbon nanostructure, which comprises two single-open host nanotubes of the same radius and joined by another single-open nanotube, which is centrally located between the host nanotubes but has a smaller radius. A metallofullerene is then enclosed inside the structure to represent a bit information and is originally located inside one of the host nanotubes. The geometric parameters, such as the radii of nanotubes and fullerene radius are purposely chosen so that the metallofullerene cannot enter the central nanotube without additional energy. By applying an external electrical field, the metallofullerene can overcome the energy barrier and pass from one end to the other end to form a two-state fullerene shuttle memory device. The key geometric parameters are provided for a range of fullerenes, including C-60, C-80, and C-100, noting that we assume most metallofullerenes take the form M@C-60, M@C-80, and M@C-100, where M denotes a metal atom or ion located noncovalently inside the fullerene C-n.
引用
收藏
页码:947 / 952
页数:6
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