A comparative study of leakage mechanism of Co and Ni salicide processes

被引：21

作者：

Goto, K ^{[1
]}

Watanabe, J ^{[1
]}

Sukegawa, T ^{[1
]}

Fushida, A ^{[1
]}

Sakuma, T ^{[1
]}

Sugii, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | 1998年

关键词：

D O I：

10.1109/RELPHY.1998.670670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the leakage mechanisms of both Co and Ni salicide processes. Statistical analyses of the junction leakage and a direct light observation of the leakage points from Co and Ni salicided junctions revealed that Ni salicide also shows many localized spots that cause leakage just like in the Co salicide case, but in the Ni salicide case the spots are along the LOGOS edge. Leakage currents were successfully simulated by means of a new spike-leakage model that considers both area and peripheral dependent spike leakage. To explain the subsequent results, we proposed a stress induced spike growth model. Working from this model, we developed a spike-leakage-free Co salicide process using a Ge pre-amorphization.

引用

页码：363 / 369

页数：7