A new single-layer resist for 193-nm lithography

被引：10

作者：

Nozaki, K

Watanabe, K

Namiki, T

Igarashi, M

Kuramitsu, Y

Yano, E

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 4B期

关键词：

193-nm lithography; ArF excimer laser; chemically amplified resist; protective group; methacrylate polymer; mevalonic lactone; 2-methyl-2-adamantanol;

D O I：

10.1143/JJAP.35.L528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A positive chemically amplified resist for 193-nm lithography has been developed. The resist consists of a copolymer of tetrahydro-4-methyl-2-oxo-2H-pyran-4-yl methacrylate and 2-methyl-2-adamantyl methacrylate and a photoacid generator. The acid-catalyzed deprotection of the protective groups leads to a large polarity change in the exposed region of the resist films and it allows for high-contrast patterning with high sensitivity. Using an ArF excimer laser exposure system, a 0.17-mu m lines and spaces pattern has been resolved.

引用

页码：L528 / L530

页数：3

共 12 条

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