Single- and double-shelled coaxial nanocables of GaP with silicon oxide and carbon

被引：33

作者：

Bae, SY ^{[1
]}

Seo, HW ^{[1
]}

Choi, HC ^{[1
]}

Han, DS ^{[1
]}

Park, J ^{[1
]}

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 17期

关键词：

D O I：

10.1021/jp046501e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Coaxial nanocables of gallium phosphide (Gal?) core with three different-typed single and double shells (i.e., silicon oxide (SiOx), carbon (C), and SiOx/C) were exclusively synthesized by the chemical vapor deposition method. The GaP/SiOx, nanocables were directly grown on gold-deposited silicon substrates. Deposition of C on the GaP nanowires and GaP/SiOx nanocables produces the GaP/C and GaP/SiOx/C nanocables, respectively. The outer diameter of the nanocables is < 50 nm. The thickness and crystallinity of the C outer layers were controllable by the growth conditions. X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence reveal that the outer layer formation reduces the surface defects of GaP nanowires. A great enhancement of the conductivity due to the C outer layers has been measured by the four-probe method. The growth process of these nanocables has been discussed on the basis of the vapor- liquid- solid mechanism.

引用

页码：8496 / 8502

页数：7

共 98 条

[1] Carbon nanotube/CdS core-shell nanowires prepared by a simple room-temperature chemical reduction method [J].