Properties of human glial cells associated with epileptic seizure foci

被引:196
作者
Bordey, A [1 ]
Sontheimer, H [1 ]
机构
[1] Univ Alabama Birmingham, Dept Neurobiol, Birmingham, AL 35294 USA
关键词
glial cells; biopsies; intractable mesio-temporal lobe epilepsy; morphological reconstruction; immunohistochemical cell identification;
D O I
10.1016/S0920-1211(98)00059-X
中图分类号
R74 [神经病学与精神病学];
学科分类号
摘要
We studied physiological properties of glial cells from acute slices of biopsies from patients operated for intractable mesio-temporal lobe epilepsy using whole-cell patch-clamp recordings. Cells were filled with Lucifer Yellow (LY) during recordings to allow morphological reconstruction and immunohistochemical cell identification. Seizure-associated astrocytes had complex, arborized, highly branched processes giving them a stellate appearance, and cells stained intensely for the intermediate filament GFAP as previously reported for 'reactive' astrocytes. GFAP-positive astrocytes from epilepsy biopsies consistently expressed voltage-activated, TTX-sensitive Na+ channels that showed fast activation and inactivation kinetics. Unlike comparison astrocytes, derived from tissues that were not associated with seizure foci, these astrocytes expressed Na+ channels at densities sufficient to generate slow action potentials (spikes) in current clamp studies. In these cells, the ratio of Na+ to K+ conductance was consistently 3-4-fold higher than in comparison human or control rat astrocytes. Four of 17 astrocytes from epilepsy patients versus 14/14 from control rat hippocampus and four of five in comparison human tissue showed a lack of inwardly rectifying K+ currents, which in normal astrocytes are implicated in the control of extracellular K+ levels. These results suggest that astrocytes surrounding seizure foci differ in morphological and physiological properties, and that glial K+ buffering could be impaired at the seizure focus, thus contributing to the pathophysiology of seizures. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:286 / 303
页数:18
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