Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

被引:95
作者
Zhou, JJJ
Allstot, DJ
机构
[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Dept Elect Engn, Tempe, AZ 85287 USA
关键词
D O I
10.1109/4.735543
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm(2) in a standard digital 0.6 mu m CMOS process. A bias current reuse technique is employed to reduce power dissipation, and process-, voltage-, and temperature-tracking biasing techniques are used. At 900 MHz, the LNA dissipates 38 mW from a single 3 V power supply and provides 4.1 dB noise figure, 12.3 dB power gain, -33.0 dB reverse isolation, and an input 1-dB compression level of -16 dBm. Analysis and modeling considerations for silicon-based monolithic transformers are presented, and it is shown that a monolithic transformer occupies less die area and provides a higher quality factor than two independent inductors with the same effective inductance in differential applications.
引用
收藏
页码:2020 / 2027
页数:8
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