Low-profile inverted-F antenna with parasitic elements on an infinite ground plane

被引:17
作者
Nakano, H [1 ]
Suzuki, R [1 ]
Yamauchi, J [1 ]
机构
[1] Hosei Univ, Coll Engn, Tokyo 1848584, Japan
关键词
inverted-F antenna; parasitic element effects; VSWR bandwidth enhancement;
D O I
10.1049/ip-map:19982067
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An inverted-F antenna (IFA) whose height is approximately one-tenth of the wavelength is analysed in the presence of a single parasitic element. The resonance phenomena of the parasitic element and IFA are investigated. Based on this investigation, an IFA with a pair of parasitic elements is fabricated and analysed. It is found that the lower and higher resonance frequencies are independently determined by the parasitic element length and the IFA inner length, respectively. The independent resonance phenomena lead to the enhancement of the VSWR frequency bandwidth. A 26% VSWR frequency bandwidth, which is more than three times as wide as that of a conventional inverted-l; antenna without parasitic elements, is realised. The radiation pattern and gain are also presented and discussed.
引用
收藏
页码:321 / 325
页数:5
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