Impact of semiconductor/contact metal thickness ratio on organic thin-film transistor performance

被引：15

作者：

Gowrisanker, S. ^{[1
]}

Ai, Y. ^{[1
]}

Quevedo-Lopez, M. A. ^{[1
]}

Jia, H. ^{[1
]}

Alshareef, H. N. ^{[1
]}

Vogel, E. ^{[1
]}

Gnade, B. ^{[1
]}

机构：

[1] Univ Texas Dallas, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2904968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the thickness ratio of pentacene to Au contacts. Contact resistance dependence on the pentacene/Au thickness ratio (r=t(pen)/t(Au)) was extracted using the transfer-length method [D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006), pp. 184-199; Necliudov , Solid-State Electron. 47, 259 (2003)]. In this paper, we show that the effect of parasitic resistance and pentacene film morphology on device performance can be decoupled. Film morphology and microstructure are reported as a function of pentacene thickness and the correlation with transistor field-effect mobility is discussed. (C) 2008 American Institute of Physics.

引用

页数：3

共 13 条

[1] An experimental study of contact effects in organic thin film transistors [J].