Metal-semiconductor transitions under uniaxial stress for single- and double-walled carbon nanotubes

被引：13

作者：

Charlier, A

McRae, E

Heyd, R

Charlier, MF

机构：

[1] Lab Chim Solide Mineral, UMR 7555, F-54506 Vandoeuvre Nancy, France

[2] Lab Phys Solide, F-57078 Metz 03, France

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2001年 / 62卷 / 03期

关键词：

nanostructures; electrical properties; electronic structure;

D O I：

10.1016/S0022-3697(00)00074-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The alignment defects observed in cylindrical carbon nanotubes are related to the band gaps in a 1-D tight binding scheme. The influence of uniaxial stress on the electronic properties is analyzed and evidence is put forward of possible experimentally observable semiconductor to metal transitions under compression for single- and double-walled nanotubes. (C) 2001 Elsevier Science Ltd. All rights reserved.

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页码：439 / 444

页数：6

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