InAs/(Al,Ga)Sb quantum well structures for magnetic sensors

被引：11

作者：

Behet, M ^{[1
]}

Das, J ^{[1
]}

De Boeck, J ^{[1
]}

Borghs, G ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

关键词：

hall element; InAs quantum well; magnetoresistor; MBE;

D O I：

10.1109/20.706528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the fabrication and characterization of Hall and magnetoresistive sensors with high sensitivity and good temperature stability. InAs/AlGaSb quantum well structures grown by molecular beam epitaxy (MBE) on semiinsulating GaAs substrates were used as active layers for magnetic field sensing. The excellent transport properties (electron mobilities up to 30,000 cm(2)/Vs at room temperature) resulted in high sensitivity for room temperature operation of magnetoresistors (relative sensitivity of 0.46 %/mT) and Hall elements (magnetic sensitivity of 5.5 V/T).

引用

页码：1300 / 1302

页数：3

共 6 条

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