Origins of colossal magnetoresistance in perovskite-type manganese oxides

被引:229
作者
Tokura, Y [1 ]
Tomioka, Y [1 ]
Kuwahara, H [1 ]
Asamitsu, A [1 ]
Moritomo, Y [1 ]
Kasai, M [1 ]
机构
[1] UNIV TOKYO,DEPT APPL PHYS,TOKYO 113,JAPAN
关键词
D O I
10.1063/1.361353
中图分类号
O59 [应用物理学];
学科分类号
摘要
Phenomena of colossal magnetoresistance (MR) or magnetic field induced insulator-metal (I-M) transitions have been investigated for single crystals of perovskite-type manganese oxides with controlled carrier density and one-electron bandwidth. In addition to the canonical MR behavior near the Curie temperature, the first-order phase transition accompanying several orders of magnitude change in resistivity has been observed under an external magnetic field for many of the composition-controlled crystals as an intrinsic bulk phenomenon. It was proved by the systematic experimental investigations that the field-induced destruction of the charge-ordered state accompanying the lattice structural as well as metamagnetic transition is a major origin of such a colossal MR. Versatile MR phenomena and I-M phase diagrams in the T-H plane are presented with their interpretation. (C) 1996 American Institute of Physics.
引用
收藏
页码:5288 / 5291
页数:4
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